STP3415 datasheet(3/6 Pages) DGNJDZ

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Symbol

Parameter

Condition

Min

Typ

Max

Unit

Static Parameters

V(BR)DSS

Drain-Source Breakdown

Voltage

VGS=0V,ID=-250 A

-20

VGS(th)

Gate Threshold Voltage

VDS=VGS,ID=-250 A

-0.3

-1.0

IGSS

Gate Leakage Current

VDS=0V,VGS=±8V

±10

VDS=-20V,VGS=0V

TJ=25°C

-1

IDSS

Zero Gate Voltage, Drain-Source

Leakage Current

VDS=-20V,VGS=0V

TJ=55°C

-5

RDS(ON)

Drain-source On-Resistance

VGS=-4.5V,ID=-4.0A

VGS=-2.5V,ID=-4.0A

VGS=-1.8V,ID=-2.0A

VGS=-1.5V,ID=-1.0A

110

Gfs

Forward Transconductance

VDS=-5V,ID=-4.0A

Source-Drain Doide

VSD

Diode Forward Voltage

IS=-1.0A,VGS=0V

-0.67

-1.0

Continuous Source Current

-6

Dynamic Parameters

Qg (-4.5V)

Total Gate Charge

11.1

Qgs

Gate-Source Charge

3.1

Qgd

Gate-Drain Charge

VDS=-10V

VGS=-4.5V

ID -4.0A

2.4

Ciss

Input Capacitance

989

Coss

Output Capacitance

167

Crss

Reverse Transfer Capacitance

VDS=-10V

VGS=0V

f=1MHz

75.5

td(on)

712

Turn-On Time

1386

td(off)

9.1

Turn-Off Time

VDD=-10V

ID=-1A

VGEN=-4.5V

RG=2.5

Note:

A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment

with TA=25 C.

B. The data tested by pulsed , pulse width

300uS , duty cycle

C. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH.

D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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