2SB502 datasheet(2/2 Pages) ISC

tên linh kiện	2SB502

Giải thích chi tiết về linh kiện	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -80V(Min)

PDF	2 Pages

Scroll/Zoom	100%

nhà sản xuất	ISC [Inchange Semiconductor Company Limited]

Trang chủ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon PNP Power Transistors

2SB502

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -0.1A; IB= 0

-80

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -2mA; IE= 0

-110

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -10mA; IC= 0

-8

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -3A; IB= -0.3A

-1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= -3A; IB= -0.3A

-1.8

ICBO

Collector Cutoff Current

VCB= -50V; IE= 0

-10

μ A

IEBO

Emitter Cutoff Current

VEB= -8V; IC= 0

-100

μ A

hFE-1

DC Current Gain

IC= -0.5A; VCE= -5V

280

hFE-2

DC Current Gain

IC= -2.5A; VCE= -5V

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

200

 h

FE Classifications

30-70

50-140

100-280

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