BCP49 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

4=2

Darlington Transistors

BCP 29, BCP 49

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Collector saturation volt. – Kollektor-Sättigungsspg. 1)

C = 100 mA, IB = 0.1 mA

CEsat

–

1 V

Base saturation voltage – Basis-Sättigungsspannung 1)

C = 100 mA, IB = 0.1 mA

BEsat

–

1.5 V

DC current gain – Kollektor-Basis-Stromverhältnis 1)

CE = 1 V, IC = 0.1 mA

BCP 29

4000

–

BCP 49

2000

–

CE = 5 V, IC = 10 mA

BCP 29

10000

–

BCP 49

4000

–

CE = 5 V, IC = 100 mA

BCP 29

20000

–

BCP 49

10000

–

CE = 5 V, IC = 500 mA

BCP 29

4000

–

BCP 49

2000

–

Gain-Bandwidth Product – Transitfrequenz

CE = 5 V, IC = 50 mA, f = 100 MHz

–

200 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

6.5 pF

–

Thermal resistance – Wärmewiderstand

junction to ambient air – Sperrschicht zu umgebender Luft

thA

93 K/W 2)

junction to soldering point – Sperrschicht zu Lötpad

thS

17 K/W

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCP 28, BCP 48

Pinning – Anschlußbelegung

BCP49 bảng dữ liệu(PDF) 2 Page - Diotec Semiconductor

BCP49 bảng dữ liệu(HTML) 2 Page - Diotec Semiconductor

Html Pages

1 2

bảng dữ liệu tải về

Link URL