2SA1096A datasheet(2/2 Pages) ISC

tên linh kiện	2SA1096A

Giải thích chi tiết về linh kiện	High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V (Min)

PDF	2 Pages

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nhà sản xuất	ISC [Inchange Semiconductor Company Limited]

Trang chủ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon PNP Power Transistor

2SA1096A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -2mA; IB= 0

-60

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-70

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1.5A; IB= -0.15A

-1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= -1.5A; IB= -0.15A

-1.5

ICBO

Collector Cutoff Current

VCB= -20V; IE= 0

-1

μ A

ICEO

Collector Cutoff Current

VCE= -10V; IB= 0

-100

μ A

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-10

μ A

hFE

DC Current Gain

IC= -1A ; VCE= -5V

220

Current-Gain

—Bandwidth Product

IE= 0.5A; VCB= -5V; f= 200MHz

150

MHz

COB

Output Capacitance

IE= 0; VCB= -20V; f= 1.0MHz

 h

FE Classifications

80-160

120-220

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