CBS10S30 datasheet(2/6 Pages) TOSHIBA

tên linh kiện	CBS10S30

Giải thích chi tiết về linh kiện	Schottky Barrier Diode Silicon Epitaxial

PDF	6 Pages

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nhà sản xuất	TOSHIBA [Toshiba Semiconductor]

Trang chủ	http://www.semicon.toshiba.co.jp/eng

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CBS10S30

4. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Forward voltage

Reverse current

Total capacitance

Symbol

VF(1)

VF(2)

VF(3)

Test Condition

IF = 0.1 A (Pulse test)

IF = 0.5 A (Pulse test)

IF = 1 A (Pulse test)

VR = 30 V (Pulse test)

VR = 0 V, f = 1 MHz

Min



Typ.

0.23

0.31

0.37

0.2

135

Max



0.45

0.5



Unit

5. Marking

Marking

Fig.

Fig. 5.1

5.1

5.1 Marking

Marking

Marking Code

Part Number

CBS10S30

6. Usage Considerations

Usage Considerations

•

Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs

more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both

forward and reverse power losses of SBDs should be considered for thermal and safety design.

2014-02-24

Rev.3.0

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