GaAs SP6T Switch, Absorptive, Single Supply

DC - 4.0 GHz

Rev. V4

MASWCC0006

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Recommended PCB Configuration

Parameter

Absolute Maximum

Max. Input Power

0.05 GHz

+27 dBm

+34 dBm

7

8

8

8

Operating Temperature

-40ºC to +85ºC

Storage Temperature

-65ºC to +125ºC

9.

Exceeding any one or combination of these limits may cause

permanent damage to this device.

10. M/A-COM does not recommend sustained operation near

these survivability limits.

11. When the RF input is applied to the terminated port, the

absolute maximum power is +30 dBm.

12. Standard CMOS TTL interface, latch-up will occur if logic

signal is applied prior to power supply.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

Typical Performance Curves

Insertion Loss vs. Frequency

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

1000

2000

3000

4000

Frequency (MHz)

+ 85 °C

- 40 °C

+ 25 °C

Isolation (dB) vs. Frequency

0

15

30

45

60

75

90

0

1000

2000

3000

4000

Frequency (MHz)

R F n- R F m, R F C - R F n

On VSWR vs. Frequency

1.00

1.20

1.40

1.60

1.80

2.00

0

1000

2000

3000

4000

Frequency (MHz)

R F OU T

R F C