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RMB12F bảng dữ liệu(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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RMB12F bảng dữ liệu(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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1 / 2 page ![]() RMB11F THRU RMB110F FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 VOLTS VOLTS VOLTS SYMBOLS UNITS Amp Amps Volts VRRM VRMS VDC I(AV) IFSM VF 1.0 30.0 1.3 Operating junction and storage temperature range Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375 ”(9.5mm) lead length at TA=50 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C IR 5.0 50.0 R θJA CJ TJ,TSTG 85.0 18.0 -55 to +150 pF C A µ Typical thermal resistance (NOTE 3) C/W Typical junction capacitance (NOTE 1) Maximum reverse recovery time (NOTE 2) trr 150 250 500 ns RMB 11F RMB 12F RMB 13F RMB 14F RMB 16F RMB 18F RMB 110F Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number Dimensions in inches and (millimeters) MBF FEATURES Glass passivated die construction Fast reverse recovery time Designed for surface mount application Plastic material-UL flammability 94V-0 Case: MBF,molded plastic Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Mounting Position: Any R θJL 30.0 Note: 3 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2 )Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A 2 . Mounted on glass epoxy PC board with 4 ×(5×5mm )copper pad. |
Số phần tương tự - RMB12F |
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Mô tả tương tự - RMB12F |
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