MICROWAVE CORPORATION

8 - 277

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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8

HMC465LP5

v00.0404

GaAs PHEMT MMIC MODULATOR DRIVER

AMPLIFIER, DC - 20.0 GHz

Outline Drawing

Absolute Maximum Ratings

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED

2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY

3. LEAD AND GRPUND PADDLE PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS]

5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT

SHALL BE 0.25mm MAX

7. PACKAGE WRAP SHALL NOT EXCEED 0.05mm

8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND

Drain Bias Voltage (Vdd)

+9.0 Vdc

Gate Bias Voltage (Vgg1)

-2.0 to 0 Vdc

Gate Bias Voltage (Vgg2)

(Vdd -8.0) Vdc to Vdd

RF Input Power (RFin)(Vdd = +8.0 Vdc)

+23 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 24 mW/°C above 85 °C)

1.56 W

Thermal Resistance

(channel to ground paddle)

41.5 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Vdd (V)

Idd (mA)

+7.5

161

+8.0

160

+8.5

159

Typical Supply Current vs. Vdd