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HMC415LP3 bảng dữ liệu(PDF) 6 Page - Hittite Microwave Corporation

tên linh kiện HMC415LP3
Giải thích chi tiết về linh kiện  GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
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HMC415LP3 bảng dữ liệu(HTML) 6 Page - Hittite Microwave Corporation

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MICROWAVE CORPORATION
8 - 193
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8
Pin Number
Function
Description
Interface Schematic
1
Vcc
Power supply voltage for the first amplifier stage. An external bypass
capacitor of 330 pF is required as shown in the application schematic.
2, 3, 5, 6, 7,
8, 9, 12, 13,
15, 16
GND
Ground: Backside of package has exposed metal ground slug that must be
connected to ground thru a short path. Vias under the device are required.
4
RF IN
This pin is AC coupled and matched to 50 Ohms from 5.0 to 6.0 GHz.
10, 11
RF OUT
RF output and DC bias for the output stage.
14
Vpd
Power control pin. For maximum power, this pin should be connected to
3.0V. A higher voltage is not recommemded. For lower idle current, this
voltage can be reduced.
HMC415LP3
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v02.0604
Pin Descriptions



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