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HMC385LP4 bảng dữ liệu(PDF) 1 Page - Hittite Microwave Corporation |
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HMC385LP4 bảng dữ liệu(HTML) 1 Page - Hittite Microwave Corporation |
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1 / 6 page ![]() MICROWAVE CORPORATION 15 - 14 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 15 MMIC VCO w/ BUFFER AMPLIFIER, 2.25 - 2.5 GHz v01.0604 General Description Features Functional Diagram The HMC385LP4 is a GaAs InGaP Heterojunc- tion Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 2.25 to 2.5 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 35mA. The voltage con- trolled oscillator is packaged in a low cost lead- less QFN 4 x 4 mm surface mount package. Pout: +4.5 dBm Phase Noise: -115 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 35 mA QFN Leadless SMT Package, 16 mm2 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • Wireless Infrastructure • Industrial Controls • Test Equipment • Military Electrical Specifications, T A = +25° C, Vcc = +3V Parameter Min. Typ. Max. Units Frequency Range 2.25 - 2.5 GHz Power Output 1.5 4.5 dBm SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output -115 dBc/Hz Tune Voltage (Vtune) 0 10 V Supply Current (Icc) (Vcc = +3.0V) 35 mA Tune Port Leakage Current 10 µA Output Return Loss 9dB Harmonics 2nd 3rd -7 -23 dBc dBc Pulling (into a 2.0:1 VSWR) 2.0 MHz pp Pushing @ Vtune= +5V -2 MHz/V Frequency Drift Rate 0.25 MHz/°C HMC385LP4 |
Số phần tương tự - HMC385LP4 |
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Mô tả tương tự - HMC385LP4 |
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