Cascadable Amplifier

5 to 500 MHz

Rev. V3

A72 / SMA72

1

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Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC -54º to +85ºC*

Frequency

MHz

2-700

5-500

5-500

Small Signal Gain (min)

dB

15.0

14.0

13.5

Gain Flatness (max)

dB

±0.2

±0.7

±1.0

Reverse Isolation

dB

20

Noise Figure (max)

dB

3.3

4.0

4.5

Power Output

@ 1 dB comp. (min)

dBm

12.5

11.5

11.0

IP3

dBm

+26

IP2

dBm

+36

Second Order Harmonic IP

dBm

+42

VSWR Input / Output (max)

1.3:1 / 1.3:1

1.7:1 / 1.7:1

1.8:1 / 1.8:1

DC Current @ 5 Volts (max)

mA

31

34

36

Features

 LOW POWER DRAIN 31 mA (TYP.)

 HIGH OUTPUT LEVEL: +12.5 dBm (TYP.)

 HIGH IP3: +28 dBm (TYP.) AT Vcc = +8 Vdc

Description

The A72 RF amplifier is a discrete thin film hybrid design,

which incorporates the use of thin film manufacturing

processes for accurate performance and high reliability.

This single stage bipolar transistor feedback amplifier design

displays impressive performance over a broadband frequency

range. An active DC biasing network is used for

temperature-stable performance, in addition to an RF Choke,

used for power supply decoupling.

Both TO-8 and Surface Mount packages are hermetically

sealed, and MIL-STD-883 environmental screening is avail-

able

.

Product Image

Ordering Information

Part Number

Package

A72

TO-8

SMA72

Surface Mount

CA72 **

SMA Connectorized

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

125ºC

DC Voltage

+9 V

Continuous Input Power

+13 dBm

Short Term Input power

(1 minute max.)

50 mW

Peak Power (3 µsec max.)

0.5 W

“S” Series Burn-In

Temperature (case)

125ºC

Parameter

Rating

140ºC/W

0.126 W

Junction Temperature Rise

18ºC

** The connectorized version is not RoHs compliant.