JDV2S10FS_14 datasheet(1/2 Pages) TOSHIBA

tên linh kiện	JDV2S10FS

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JDV2S10FS

2014-03-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

JDV2S10FS

VCO for the UHF band

• High capacitance ratio: C0.5V / C2.5V = 2.55 (typ.)

• Low series resistance: rs = 0.35 Ω (typ.)

• This device is suitable for use in a small-size tuner.

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Reverse voltage

VR

10

V

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

VR

IR = 1 μA

10

⎯

V

Reverse current

IR

VR = 10 V

⎯

3

nA

C0.5V

VR = 0.5 V, f = 1 MHz

7.3

⎯

8.4

Capacitance

C2.5V

VR = 2.5 V, f = 1 MHz

2.75

⎯

3.4

pF

Capacitance ratio

C0.5V / C2.5V

⎯

2.4

2.55

⎯

Series resistance

rs

VR = 1 V, f = 470 MHz

⎯

0.35

0.5

Ω

Note: Signal level when capacitance is measured: Vsig = 500 mVrms

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-1L1A

Weight: 0.0006 g (typ.)

F

0.2

0.1±0.05

0.6±0.05

A

0.48+0.02

-0.03

±0.05

A

M

0.07

Start of commercial production

2003-02

Số phần tương tự - JDV2S10FS_14

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Toshiba Semiconductor	JDV2S10FS	106Kb / 2P	Silicon Epitaxial Planar Type VCO for the UHF band

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