DMTH6005LK3 datasheet(2/7 Pages) DIODES

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DMTH6005LK3

Document number: DS38211 Rev. 2 - 2

2 of 7

www.diodes.com

November 2015

DMTH6005LK3

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6)

TC = +25°C

(Note 9)

TC = +100°C

Maximum Body Diode Forward Current (Note 6)

TC = +25C

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

150

Avalanche Current, L=1mH

IAS

14.8

Avalanche Energy, L=1mH

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

2.1

Thermal Resistance, Junction to Ambient (Note 5)

RJA

°C/W

Total Power Dissipation (Note 6)

TC = +25°C

100

Thermal Resistance, Junction to Case (Note 6)

RJC

1.5

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7 )

Drain-Source Breakdown Voltage

BVDSS



VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS



µA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS



±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)



VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)



4.5

5.6

Ω

VGS = 10V, ID = 50A



5.6



7.2

VGS = 6V, ID = 20A



7.9

VGS = 4.5V, ID = 12.5A

Diode Forward Voltage

VSD



1.2

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



2962



VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss



965.2



Reverse Transfer Capacitance

Crss



59.8



Gate Resistance



0.66



Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 10V)



47.1





VDD = 30V, ID = 50A

Total Gate Charge (VGS = 4.5V)



23.1



Gate-Source Charge

Qgs



10.2



Gate-Drain Charge

Qgd



12.5



Turn-On Delay Time

tD(ON)



8.3



VDD = 30V, VGS = 10V,

ID = 30A, RG = 3.3Ω

Turn-On Rise Time



9.4



Turn-Off Delay Time

tD(OFF)



Turn-Off Fall Time



8.9



Body Diode Reverse Recovery Time

tRR



40.4



IF = 30A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR



49.7



Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

9. Package limited.

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