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MASW-011036-1413RI bảng dữ liệu(PDF) 3 Page - M/A-COM Technology Solutions, Inc.

tên linh kiện MASW-011036-1413RI
Giải thích chi tiết về linh kiện  Ka-Band High Power Terminated SPDT PIN Switch
PDF  5 Pages
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nhà sản xuất  MA-COM [M/A-COM Technology Solutions, Inc.]
Trang chủ  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MASW-011036-1413RI bảng dữ liệu(HTML) 3 Page - M/A-COM Technology Solutions, Inc.

  MASW-011036-1413RI Datasheet HTML 1Page - M/A-COM Technology Solutions, Inc. MASW-011036-1413RI Datasheet HTML 2Page - M/A-COM Technology Solutions, Inc. MASW-011036-1413RI Datasheet HTML 3Page - M/A-COM Technology Solutions, Inc. MASW-011036-1413RI Datasheet HTML 4Page - M/A-COM Technology Solutions, Inc. MASW-011036-1413RI Datasheet HTML 5Page - M/A-COM Technology Solutions, Inc.  
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Ka-Band High Power Terminated SPDT PIN Switch
26 - 40 GHz
Rev. V7
MASW-011036
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
Absolute Maximum Ratings5,6
Parameter
Absolute Maximum
Reverse Bias Voltage
-50 V
Forward Bias Current
40 mA
CW Incident Power
43 dBm
CW Incident Power
(Terminated Port)
26 dBm
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. M/ACOM does not recommend sustained operation near these
survivability limits.
Truth Table3,4
RFCOMMOM Path
Bias 1
Bias 2
RF1 Insertion Loss
RF2 Isolation
-15 V (0 mA)
+4 V (+25 mA)
RF2 Insertion Loss
RF1 Isolation
+4 V (+25 mA)
-15 V (0 mA)
Die Outline
Dimensions indicated in μm.
Die Thickness: 100 μm
RF Pads (1, 3, 4): 100 x 200 μm.
DC Bias Pads (2 & 5): 100 x 100 μm.
Meets JEDEC moisture sensitivity level 1 requirements.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these HBM class 1A
devices.



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