Symbol

Parameter

Conditions

Min

Max

Unit

Drain-source breakdown voltage

45

Zero gate voltage drain current

Forward transconductance (note 1)

Reverse transfer capacitance (note 2,3)

Input capacitance (note 2,3)

Drain-source body diode characteristics

Turn-on delay time (note2,3)

Turn-off delay time (note2,3)

Rise time (note2,3)

Fall time(note2,3)

V

= -4.5V ,

GS

gfs

td(on)

tr

td(off)

tf

-12

-1

6

5

11

22

16

V

mΩ

S

740

Page 2

REV:A

QW-BTR46

Comchip Technology CO., LTD.

MOSFET

Dynamic characteristics

V

= -2.5V ,

GS

60

Output capacitance (note 2,3)

Typ

290

190

pF

Static characteristics

Company reserves the right to improve product design , functions and reliability without notice.

Gate-source leakage current

±100

nA

Drain-source on-resistance (note 1)

µA

-0.9

V

-0.5

Gate

threshold voltage

-source

V

= -1.8V ,

GS

90

30

40

60

9

Qgs

V

= -4V ,

DS

= -2.5A

Total gate charge (note2)

Qg

15

nC

Gate-source charge (note2)

45

1.2

1.6

7.8

Qgd

Gate-resistance (note2,3)

f = 1MHz

Rg

1.4

Ω

Gate-drain charge (note2)

14

7

20

tr

≈ -3.3A

53

Trun-on delay time (note2,3)

td(on)

nS

Rise time (note2,3)

48

13

35

32

td(off)

Fall time (note2,3)

tf

Trun-off delay time (note2,3)

20

10

V

= -4V

DD

≈ -3.3A

V

= -4V

DD

Continuous source-drain diode current

Body ciode voltage

Pulse diode forward current (note1)

Is

-6

-20

-1.2

A

V

Note:

1.Pulse test; pulse width

≤300µs, Duty cycle≤2%

2. Guaranteed by design, not subject to production testing.

3. These parameters have no way to verify.

10

17

33

24

Comchip

S M D D i o d e S p e c i a l i s t