GaAs SPDT Switch

DC - 3.0 GHz

Rev. V1

MASW-007221

2

2

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2

4. External DC blocking capacitors are required on all RF ports when using positive voltage control.

5. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 GHz - 3 GHz.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

DC - 1 GHz

1 - 2 GHz

2 - 3 GHz

dB

dB

dB

—

—

—

0.35

0.45

0.56

0.5

0.6

0.8

DC - 1 GHz

1 - 2 GHz

2 - 3 GHz

dB

dB

dB

20

15

10

22

17

12

—

—

—

Isolation

DC - 3 GHz

Ratio

—

1.2:1

1.4:1

500 MHz - 3 GHz

dBm

—

21

—

500 MHz - 3 GHz

dBm

—

27

—

2-Tone 900 MHz, 5 MHz spacing (3.0 V)

dBm

—

81

—

2-Tone 900 MHz, 5 MHz spacing (3.0 V)

dBm

—

52

—

Trise, Tfall

10% to 90% RF, 90% to 10% RF

ns

—

25

—

Ton, Toff

50% Control to 90% RF, Control to 10% RF

ns

—

25

—

Transients

In-Band

mV

—

25

—

Control Current

µA

—

4

15

Qualification

Qualified

to

M/A-COM

specification

REL-201,

Process Flow –2.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these devices.

Truth Table

Mode

(Control)

V1

V2

RFC -

RF1

RFC -

RF2

0 ± 0.2 V

+2.3 to +8 V

Off

On

+2.3 to +8 V

0 ± 0.2 V

On

Off

0 ± 0.2 V

-2.3 V to -8 V

On

Off

-2.3 V to -8 V

0 ± 0.2 V

Off

On

6. External DC blocking capacitors are required on all RF ports.

1000 pF capacitors used for positive control voltage. For

higher frequency operation, smaller value DC blocking ca-

pacitors can be substituted.

7. If negative control is used, DC blocking capacitors are not

required on RF ports.

†

Reference Application Note M538 for lead-free solder reflow

recommendations.