MOSFET

RoHS Device

Page 1

REV:A

Mechanical data

- Case: SOT-323, molded plastic.

- Terminals: Solderable per MIL-STD-750,

method 2026.

CJ1012-G

QW-BTR44

Comchip Technology CO., LTD.

Drain-source voltage

Gate-source voltage

Drain current-continuous

Junction temperature

Storage temperature

Unit

Symbol

Parameter

Value

20

±12

500

150

833

150

-55 to +150

V

V

mA

mW

°C/W

°C

°C

Thermal resistance from junction to ambient

Drain Current-pulsed (note1)

1000

Company reserves the right to improve product design , functions and reliability without notice.

N-Channel

Features

- High-Side Switching.

- Low On-Resistance.

- Low Threshold.

- Fast Switching Speed.

- ESD protected up to 2KV.

Dimensions in inches and (millimeter)

SOT-523

Circuit Diagram

G : Gate

S : Source

D : Drain

D

G

S

1

3

2

3

1

2

0.067(1.70)

0.059(1.50)

0.035(0.90)

0.028(0.70)

0.043(1.10)

0.035(0.90)

0.031(0.80)

0.028(0.70)

0.010(0.25)

0.006(0.15)

0.008(0.20)

0.004(0.10)

0.069(1.75)

0.057(1.45)

0.004(0.10) max

0.010(0.26)

0.018(0.46)

0.014(0.35)

0.010(0.25)

0.020(0.50)TYP.

275

455

°C/W

Thermal resistance from junction to case

mA