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CDBV220-G bảng dữ liệu(PDF) 1 Page - Comchip Technology |
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CDBV220-G bảng dữ liệu(HTML) 1 Page - Comchip Technology |
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1 / 4 page ![]() CDBV220-G Forward current: 2.0A Reverse voltage: 20V RoHS Device Features - Low Forward Voltage Drop. - Very Small SMD Package. Mechanical Data - Case: SOD-323, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. - Polarity: Indicated by cathode end. Dimensions in inches and (millimeter) 0.071 (1.80) 0.063 (1.60) 0.055 (1.40) 0.047 (1.20) 0.108 (2.75) 0.100 (2.55) 0.039 (1.00) MAX. 0.014 (0.35) 0.010 (0.25) 0.019 (0.475)REF 0.006 (0.15) 0.004 (0.10) SMD Schottky Barrier Diodes 0.003 (0.08) Circuit Diagram Parameter Unit Maximum Ratings (At Ta=25°C, unless otherwise noted) Peak repetitive reverse voltage Working peak reverse voltage RMS reverse voltage Continuous forward current Non-repetitive peak forward surge current @ t=8.3ms Power dissipation Thermal resistance from junction to ambient Junction temperature range Symbol VRRM VRWM VR(RMS) IF IFSM PD RθJA TJ 20 2 9 250 480 400 -40 ~ +125 V V A A mW °C/W °C Unit Electrical Characteristics (At Ta=25°C, unless otherwise noted) Reverse breakdown voltage Reverse current Forward voltage (Note 1) Total capacitance 20 V μA pF Conditions VR = 4V, f = 1MHz V(BR) IR VF Ctot 100 120 IR = 1mA VR = 10V VR = 20V IF = 1A Storage temperature range TSTG -55 ~ +150 °C V 0.45 0.55 IF = 2A SOD-323 0.000 (0.00) CDBV220-G 208 (Note 1) (Note 2) (Note 1) (Note 2) 14 Note: (1) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Note: (1) 300 ≤ Pulse test: tp ≤ μs ; δ 0.02 80 Parameter Max. Symbol Min. (2) Device mounted on an FR4 PCB with copper pad 10 x 10 mm. QW-BB050 Page 1 REV: A Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. |
Số phần tương tự - CDBV220-G |
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Mô tả tương tự - CDBV220-G |
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