DMN2041LSD

Document number: DS31964 Rev. 3 - 2

2 of 6

www.diodes.com

February 2014

© Diodes Incorporated

DMN2041LSD

Characteristic

Symbol

Value

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

12

V

Drain Current (Note 5)

Steady

State

7.63

4.92

A

Pulsed Drain Current (Note 6)

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.16

W

107.4

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20

—

—

V

—

—

1

μA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.5

—

1.2

V

Static Drain-Source On-Resistance

—

19

28

mΩ

25

41

Forward Transfer Admittance

—

6

—

S

Diode Forward Voltage

—

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

550

—

pF

f = 1MHz

Output Capacitance

—

88

—

Reverse Transfer Capacitance

—

81

—

Gate Resistance

—

1.34

—

Ω

Total Gate Charge

—

15.6

—

nC

Total Gate Charge

—

7.2

—

nC

Gate-Source Charge

—

1

—

Gate-Drain Charge

—

1.9

—

Turn-On Delay Time

—

4.69

—

ns

Turn-On Rise Time

—

13.19

—

Turn-Off Delay Time

—

22.1

—

Turn-Off Fall Time

—

6.43

—

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by function temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.