DMNH6012SPS datasheet(3/8 Pages) DIODES

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DMNH6012SPS

Document number: DS38084 Rev. 3 - 2

3 of 8

www.diodes.com

April 2016

DMNH6012SPS

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current, TJ = +25°C

IDSS

—

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

—

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = 10V, ID = 50A

Diode Forward Voltage

VSD

—

0.7

1.2

VGS = 0V, IS = 1.7A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS

—

1,926

—

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

COSS

—

330

—

Reverse Transfer Capacitance

CRSS

—

112

—

Gate Resistance

—

2.0

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

16.3

—

VDS = 30V, ID = 25A

Total Gate Charge (VGS = 10V)

—

35.2

—

Gate-Source Charge

QGS

—

7.6

—

Gate-Drain Charge

QGD

—

6.9

—

Turn-On Delay Time

tD(ON)

—

6.4

—

VGS = 10V, VDS = 30V,

RG = 3Ω, ID = 25A

Turn-On Rise Time

—

11.9

—

Turn-Off Delay Time

tD(OFF)

—

16.5

—

Turn-Off Fall Time

—

Body Diode Reverse Recovery Time

tRR

—



—



IF = 25A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



—



Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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