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STW7C2SB bảng dữ liệu(PDF) 4 Page - Seoul Semiconductor

tên linh kiện STW7C2SB
Giải thích chi tiết về linh kiện  Achieving the best system cost in Mid/High Power
PDF  31 Pages
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nhà sản xuất  SEOUL [Seoul Semiconductor]
Trang chủ  http://www.seoulsemicon.com
Logo SEOUL - Seoul Semiconductor

STW7C2SB bảng dữ liệu(HTML) 4 Page - Seoul Semiconductor

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Product Data Sheet
STW7C2SB
– Mid-Power LED
 “제품 명 – 제품 군” 을 기입하십시오.
제품 군은 홈페이지 응용분야 분류기준을 참고한다.
(예) SZ5M0WWC9 – High-power LED
4
글씨체는 : Arial, 10pt
 Revision numbering 기준:
• 가스펙은 0.0 부터 시작 0.x….
• Final 승인원: 1.0 부터 시작
• 기존에서 일부 수정: +0.1
• 새로운 Data 추가 /또는 기존 것 삭제: +1.0
 수정일자 표기형식; YYYY-MM-DD
(예) 2013-04-01
Rev2.0, Dec 3, 2015
Performance Characteristics
 전기적 특성 및 광 특성 스펙 테이블
Parameter
Symbol
Value
Unit
Min.
Typ.
Max.
Forward Current
I
F
-
100
-
mA
Forward Voltage[1]
V
F
5.8
-
6.4
V
Luminous Intensity (5000K)[1]
Iv
100mA
-
30.0
-
cd
150mA
-
42.6
-
cd
Luminous Intensity (3000K)[1]
Iv
100mA
-
30.5
-
cd
150mA
-
43.3
-
cd
CRI[1]
R
a
70
-
-
Viewing Angle [2]
2
Θ
1/2
-
120
-
Deg.
Thermal resistance (J to S) [3]
Rθ
J-S
-
10
-
℃/W
ESD Sensitivity(HBM)
-
Class 3A JESD22-A114-E
Parameter
Symbol
Value
Unit
Forward Current
I
F
200
mA
Power Dissipation
P
D
1.44
W
Junction Temperature
T
j
125
ºC
Operating Temperature
T
opr
-40~ + 85
ºC
Storage Temperature
T
stg
-40 ~ + 100
ºC
Table 3. Characteristics, I
F=100mA, Tj= 25ºC, RH30%
Table 4. Absolute Maximum Ratings
Notes :
(1) Tolerance : VF :±0.1V, IV :±7%, Ra :±2, x,y :±0.005
(2) 2Θ
1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
(3) Thermal resistance : Rth
JS (Junction / solder)
•
LED’s properties might be different from suggested values like above and below tables if
operation condition will be exceeded our parameter range. Care is to be taken that power
dissipation does not exceed the absolute maximum rating of the product.
•
Thermal resistance can be increased substantially depending on the heat sink design/operating
condition, and the maximum possible driving current will decrease accordingly.
•
All measurements were made under the standardized environment of Seoul Semiconductor.



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