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CDBAS340-HF bảng dữ liệu(PDF) 1 Page - Comchip Technology

tên linh kiện CDBAS340-HF
Giải thích chi tiết về linh kiện  SMD Schottky Barrier Rectifiers
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nhà sản xuất  COMCHIP [Comchip Technology]
Trang chủ  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CDBAS340-HF bảng dữ liệu(HTML) 1 Page - Comchip Technology

  CDBAS340-HF Datasheet HTML 1Page - Comchip Technology CDBAS340-HF Datasheet HTML 2Page - Comchip Technology CDBAS340-HF Datasheet HTML 3Page - Comchip Technology CDBAS340-HF Datasheet HTML 4Page - Comchip Technology  
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Page 1
QW-JB062
SMD Schottky Barrier Rectifiers
REV:A
Comchip Technology CO., LTD.
Comchip
S M D D i o d e S p e c i a l i s t
Company reserves the right to improve product design , functions and reliability without notice.
Reverse Voltage: 40 Volts
Forward Current: 3.0 Amp
RoHS Device
CDBAS340-HF
Dimensions in inches and (millimeter)
SMA-S
0.191(4.85)
0.173(4.40)
0.108(2.75)
0.096(2.45)
0.043(1.10)
Max.
0.043(1.10)
Mechanical data
- Built-in strain relief
- Metal silicon junction with guard ring
Halogen Free
Features
- Silicon epitaxial planar chips
- Case: Molded plastic, SMA-S
- Terminals: Solder plated solderable per
MIL-STD-750 method 2026
- Polarity: Color band denotes cathode end
- Epoxy: UL94-V0 rate flame retardant
Circuit diagram
Typ.
- Weight: 0.045 grams(approx.)
- For use in low voltage, high frequency invertors
free wheeling and polarity protection
- High surge and current capability
0.045(1.15)
Typ.
0.153(3.90)
0.132(3.35)
- Mounting position: Any
Maximum Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted)
Notes: 1. Pulse test: 300µS pulse width,1% duty cycle
Maximum recurrent peak reverse voltage
Maximum DC blocking voltage
Maximum RMS voltage
Peak forward surge current
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
Maximum DC reverse current
at rated DC blocking voltage
Operating junction temperature range
Storage temperature range
Value
Unit
Symbol
Parameter
VRRM
VDC
VRMS
IFSM
IF(AV)
IR
RθJA
TJ
TSTG
40
40
28
80
3.0
20
55
-55 to +125
-55 to +150
V
V
V
A
A
mA
°C/W
°C
°C
Maximum forward voltage at 3.0A (note1)
VF
V
0.50
2. Measured at 1.0MHz and applied reverse voltage of 4.0 volts
RθJL
Junction to lead
Junction to Ambient
17
°C/W
T =25°C
A
TA=100°C
0.1
CJ
250
P
F
Typical junction capacitance (note2)
Typical thermal resistance (note3)
Maximum average forward current
0.2 x0.2” 5.0x5.0mm) copper pad area, see Figure 1
(
3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2x0.2”(5.0x5.0mm) copper pad areas.
0.057(1.45)
0.051(1.30)


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