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ACPDQC3V3T-HF bảng dữ liệu(PDF) 1 Page - Comchip Technology |
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ACPDQC3V3T-HF bảng dữ liệu(HTML) 1 Page - Comchip Technology |
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1 / 4 page ![]() ACPDQC3V3T-HF SMD ESD Protection Diode Page 1 Features - Bi-directional ESD protection. - Surface mount package. - Ultra small SMD package:0402 - High component density. Mechanical data - Case: 0402C/SOD-923 Standard package, molded plastic. - Terminals: Matte tin plated, solderable per MIL-STD-750, method 2026. - Mounting position: Any. - Weight: 0.001 grams(approx.). Comchip Technology CO., LTD. REV:A AQW-G7006 RoHS Device Halogen Free Comchip S M D D i o d e S p e c i a l i s t Company reserves the right to improve product design , functions and reliability without notice. - IEC 61000-4-2 ±30kV(Contact). - ESD Rating of Class 3 per Human Body Model. - ESD Rating of Class 4 Machine Model. per Dimensions in inches and (millimeter) 0402C/SOD-923F 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) 0.022(0.55) 0.022(0.55) 0.018(0.45) 0.012(0.30) 0.008(0.20) 0.018(0.45) 0.001(0.02) Max. Circuit diagram -Comply with AEC-Q101 Maximum Rating (at TA=25°C unless otherwise noted) Symbol Parameter Value Unit Conditions Peak pulse power PPP W 170 Operation temperature range Tj °C Storage temperature range TSTG -55~+150 °C ESD kV IEC 61000-4-2(air) IEC 61000-4-2(contact) ESD capability -40~+125 Symbol Typ Parameter Min Max Unit Conditions Breakdown voltage VBR V IT = 1mA 3.6 Reverse leakage current IR uA VRWM = 3.3V 0.5 Clamping voltage VC V 4.65 IPP = 1A, TP = 8/20us V Working peak reverse voltage VRWM 3.3 Peak pulse current IPP A TP = 8/20us 16 TP = 8/20us ±30 Junction capacitance 25 CJ pF VR = 0V, f = 1MHz Electrical Characteristics (at TA=25°C unless otherwise noted) 4.2 20 <0.02 ESD ±30 4.6 IPP = 16A, TP = 8/20us 9.8 Clamping voltage VCL V 6 IPP = 5A, TP 100ns = IPP = 18A, TP = 100ns 8.75 Dynamic resistance RDYN Ω 0.18 |
Số phần tương tự - ACPDQC3V3T-HF |
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Mô tả tương tự - ACPDQC3V3T-HF |
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