AP70SL500AI datasheet(1/5 Pages) A-POWER

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Trang chủ	http://www.a-power.com.tw

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AP70SL500AI

Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ 100% R

g & UIS Test

VDS @ Tj,max.

750V

▼ Fast Switching Characteristic

RDS(ON)

0.5Ω

▼ Simple Drive Requirement

ID

3,4

8.8A

▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25

oC(unless otherwise specified)

Symbol

Units

VDS

Drain-Source Voltage

V

VGS

Gate-Source Voltage

V

ID@TC=25℃

Drain Current, VGS @ 10V

3,4

A

ID@TC=100℃

Drain Current, VGS @ 10V

3,4

A

IDM

Pulsed Drain Current

1

A

dv/dt

MOSFET dv/dt Ruggedness (VDS = 0 …400V )

V/ns

PD@TC=25℃

Total Power Dissipation

W

PD@TA=25℃

Total Power Dissipation

W

EAS

Single Pulse Avalanche Energy

5

mJ

dv/dt

Peak Diode Recovery dv/dt

6

V/ns

TSTG

Storage Temperature Range

℃

TJ

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Parameter

Value

Units

Rthj-c

Maximum Thermal Resistance, Junction-case

4

℃

/W

Rthj-a

65

℃

/W

Data & specifications subject to change without notice

1

Parameter

Rating

Maximum Thermal Resistance, Junction-ambient

50

48

15

201505191

1.92

-55 to 150

31.2

700

+20

8.8

5.6

20

Halogen-Free Product

G

D

S

AP70SL500A series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The TO-220CFM package is widely preferred for all commercial-

industrial through hole applications. The mold compound provides a

high isolation voltage capability and low thermal resistance between

the tab and the external heat-sink.

G

D

S

TO-220CFM(I)

.

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