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UT54ACTS899 bảng dữ liệu(PDF) 4 Page - Aeroflex Circuit Technology |
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UT54ACTS899 bảng dữ liệu(HTML) 4 Page - Aeroflex Circuit Technology |
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4 / 17 page ![]() 4 RADIATION HARDNESS SPECIFICATIONS 1 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table. 2. Not tested, inherent of CMOS technology. ABSOLUTE MAXIMUM RATINGS1 Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability and performance. RECOMMENDED OPERATING CONDITIONS PARAMETER LIMIT UNITS Total Dose 1.0E5 rads(Si) SEU Onset LET >108 MeV-cm2/mg SEL Immune >108 MeV-cm2/mg Neutron Fluence2 1.0E14 n/cm2 SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage -0.3 to 6.0 V VI/O Voltage any pin during operation -0.3 to VDD +0.3 V TSTG Storage Temperature range -65 to +150 C TJ Maximum junction temperature +175 C JC Thermal resistance junction to case 20 C/W II DC input current +10 mA PD Maximum power dissipation mW SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage 4.5 to 5.5 V VIN Input voltage any pin 0 to VDD V TC Temperature range -55 to +125 oC tINRISE tINFALL Maximum input rise or fall time (VIN transitioning between VIL (max) and VIH (min)) 20 ns |
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