4

OPERATIONAL ENVIRONMENT

Notes:

1. Device storage elements are immune to SEU affects.

2. Not tested, inherent of CMOS technology.

ABSOLUTE MAXIMUM RATINGS

Note:

1.Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at

these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS

PARAMETER

LIMIT

UNITS

Total Dose

1.0E6

rad(Si)

80

SEL Threshold

>120

1.0E14

SYMBOL

PARAMETER

LIMIT

UNITS

Supply voltage

-0.3 to 7.0

V

Voltage any pin

V

Storage Temperature range

-65 to +150

°C

Maximum junction temperature

+175

°C

Lead temperature (soldering 5 seconds)

+300

°C

Θ

JC

Thermal resistance junction to case

20

°C/W

DC input current

±10

mA

Maximum power dissipation

1

W

SYMBOL

PARAMETER

LIMIT

UNITS

Supply voltage

4.5 to 5.5

V

Input voltage any pin

V

Temperature range

-55 to + 125

°C

48MHz

Duty Cycle

50

± 20%

MHz