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10-R0126PA035SC-M620F40 bảng dữ liệu(PDF) 3 Page - Vincotech

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nhà sản xuất  VINCOTECH [Vincotech]
Trang chủ  http://www.vincotech.com
Logo VINCOTECH - Vincotech

10-R0126PA035SC-M620F40 bảng dữ liệu(HTML) 3 Page - Vincotech

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10-RZ126PA035SC-M620F41
10-R0126PA035SC-M620F40
Parameter
Symbol
Unit
VGE [V] or
VGS [V]
Vr [V]
or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Max
Tj=25°C
5
5,8
6,5
Tj=150°C
Tj=25°C
1,5
1,95
2,3
Tj=150°C
2,24
Tj=25°C
0,015
Tj=150°C
Tj=25°C
200
Tj=150°C
Tj=25°C
94
Tj=150°C
97
Tj=25°C
47
Tj=150°C
45
Tj=25°C
210
Tj=150°C
281
Tj=25°C
63
Tj=150°C
130
Tj=25°C
2,94
Tj=150°C
4,08
Tj=25°C
1,97
Tj=150°C
3,38
Thermal resistance chip to heatsink per chip
RthJH
Phase-Change
Material
0,94
K/W
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
1,10
K/W
Tj=25°C
1,2
1,90
2,3
Tj=150°C
1,88
Tj=25°C
15
Tj=150°C
21
Tj=25°C
333
Tj=150°C
565
Tj=25°C
2,69
Tj=150°C
5,50
di(rec)max
Tj=25°C
114
/dt
Tj=150°C
86
Tj=25°C
1,07
Tj=150°C
2,27
Thermal resistance chip to heatsink per chip
RthJH
Phase-Change
Material
1,49
K/W
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
1,75
K/W
Tj=25°C
pF
ns
115
mWs
ns
A
nC
nA
V
mA
V
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
155
none
1950
25
35
0,0012
Rgon=16
Thermistor
∆R/R
Rated resistance
R
Power dissipation constant
Deviation of R25
mW/K
Power dissipation
P
mW
2
600
600
25
0
960
35
1200
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Fall time
Turn-off delay time
Turn-on delay time
Rise time
Gate-emitter leakage current
Reverse recovery time
Reverse recovered energy
Peak rate of fall of recovery current
Turn-on energy loss per pulse
Reverse recovered charge
Inverter Diode
Peak reverse recovery current
Reverse transfer capacitance
Diode forward voltage
Gate charge
Cies
±15
40
35
±15
Rgon=16
0
20
15
Rgoff=16
f=1MHz
mWs
A/µs
µC
Characteristic Values
Value
Conditions
Input capacitance
Output capacitance
Turn-off energy loss per pulse
Integrated Gate resistor
Inverter Transistor
Gate emitter threshold voltage
VGE(th)
VCE(sat)
ICES
Rgint
IGES
tf
Eon
Eoff
td(on)
IRRM
VF
Coss
Crss
Qrr
trr
QGate
tr
td(off)
VCE=VGE
Erec
0
±15
200
-5
%
4700
5
Tj=25°C
V
270
3500
B-value
B(25/50)
Tol. ±3%
K
B(25/100)
Tj=25°C
3560
K
Tj=25°C
B-value
Vincotech NTC Reference
G
3
Revision: 2
Copyright by Vincotech



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