CJMPD8 datasheet(2/5 Pages) ZHAOXINGWEI

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7

Drain-Source Breakdown Voltage

BVDSS

-20



VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS



-1

µA

VDS = -20V, VGS = 0V

Gate-Source Leakage

IGSS









100

800

VGS = 8V, VDS = 0V

VGS = 12V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

-0.45



-0.9

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS (ON)





Ω

VGS = -4.5V, ID = -2.8A

VGS = -2.5V, ID = -2.0A

VGS = -1.8V, ID = -1.0A

Forward Transfer Admittance

|Yfs|



VDS = -5V, ID = -2.8A

Diode Forward Voltage (Note 7)

VSD



0.7

-1.2

VGS = 0V, IS = -1.6A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss



536



VDS = -10V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



Reverse Transfer Capacitance

Crss



Gate Resistance

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

6.5

VGS = -4.5V, VDD = -10V,

ID = -1.5A

Gate-Source Charge

Qgs

0.8

Gate-Drain Charge

Qgd

1.4

Turn-On Delay Time

tD(on)

11.51

VGEN = -4.5V, VDD = -10V,

RL = 10Ω, RG = 6Ω

Turn-On Rise Time

12.09

Turn-Off Delay Time

tD(off)

55.34

Turn-Off Fall Time

27.54

Notes:

Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.

Repetitive rating, pulse width limited by junction temperature.

Short duration pulse test used to minimize self-heating effect.

SMD Type

MOSFET

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