IRFS640B datasheet(2/9 Pages) KERSEMI

2 / 9 page

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

200

∆BV

DSS

∆T

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

0.2

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 200 V, VGS = 0 V

µA

VDS = 160 V, TC = 125°C

100

µA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

100

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

2.0

4.0

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 9.0 A

0.145

0.18

Ω

gFS

Forward Transconductance

VDS = 40 V, ID = 9.0 A

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

1300

1700

Coss

Output Capacitance

175

230

Crss

Reverse Transfer Capacitance

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 100 V, ID = 18 A,

RG = 25 Ω

Turn-On Rise Time

145

300

td(off)

Turn-Off Delay Time

145

300

Turn-Off Fall Time

110

230

Total Gate Charge

VDS = 160 V, ID = 18 A,

VGS = 10 V

Qgs

Gate-Source Charge

6.5

Qgd

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

ISM

Maximum Pulsed Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 18 A

1.5

trr

Reverse Recovery Time

VGS = 0 V, IS = 18 A,

dIF / dt = 100 A/µs

195

Qrr

Reverse Recovery Charge

1.47

µC

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