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RT3PFFM bảng dữ liệu(PDF) 1 Page - Isahaya Electronics Corporation |
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RT3PFFM bảng dữ liệu(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 3 page ![]() RT3PFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ISAHAYA ELECTRONICS CORPORATION DESCRIPTION RT3PFFM is composite transistor built with two RT1P431 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit OUTLINE DRAWING Unit:mm MAXIMUM RATING(Ta=25℃)(RTr1, RTr2 COMMON) SYMBOL PARAMETER RATING UNIT VCBO Collector to Base voltage -50 V VEBO Emitter to Base voltage -10 V VCEO Collector to Emitter voltage -50 V VIN Input voltage -30 V IC Collector current -100 mA ICM Peak Collector current -200 mA PT Total dissipation 200 mW Tj Junction temperature + 150 ℃ Tstg Storage temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃)(RTr1, RTr2 COMMON) SYMBOL PARAMETER TEST CONDITIONS LIMITS UNIT MIN TYP MAX V(BR)CEO Collector to Emitter breakdown voltage I C=-100µA,RBE=∞ -50 - - V ICBO Collector cut off current VCB=-50V,I E =0 - - -0.1 µA IEBO Emitter cut off current VEB=-5V,I C =0 -399 -532 -771 µA hFE DC forward current gain VCE=-5V,I C =-10mA 20 - - - VCE(sat) Collector to Emitter saturation voltage I C =-10mA,I B =-0.5mA - -0.1 -0.3 V VI(ON) Input on voltage VCE=-0.2V,I C =-5mA - -1.4 -2.3 V VI(OFF) Input off voltage VCE=-5V,I C =-100µA -0.8 -1.1 - V R1 Input resistor - 3.3 4.7 6.1 kΩ R2/R1 Resistor ratio - 0.8 1.0 1.2 - fT Gain band width product VCE=-6V,I E =10mA - 150 - MHz MARKING F P F 1 2 3 6 5 4 . 1.25 2.1 ① ② ③ ⑤ ④ ⑥ TERMINAL CONNECTOR ①: EMITTER1 ②: BASE1 ③: COLLECTOR2 ④: EMITTER2 ⑤: BASE2 ⑥: COLLECTOR1 JEITA:SC-88 JEDEC:- ①② ⑥ ③ ④ ⑤ RTr1 RTr2 R2 R2 R1 R1 |
Số phần tương tự - RT3PFFM |
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Mô tả tương tự - RT3PFFM |
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