CGH40120F datasheet(1/13 Pages) CREE

tên linh kiện	CGH40120F

Giải thích chi tiết về linh kiện	120 W, RF Power GaN HEMT

PDF	13 Pages

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nhà sản xuất	CREE [Cree, Inc]

Trang chủ	http://www.cree.com/

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Subject to change without notice.

www.cree.com/rf

CGH40120F

120 W, RF Power GaN HEMT

Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGH40120F, operating from a 28 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efficiency, high gain and

wide bandwidth capabilities making the CGH40120F ideal for linear and

compressed amplifier circuits. The transistor is available in a flange

package.

FEATURES

• Up to 2.5 GHz Operation

• 20 dB Small Signal Gain at 1.0 GHz

• 15 dB Small Signal Gain at 2.0 GHz

• 120 W Typical P

SAT

• 70 % Efficiency at P

SAT

• 28 V Operation

APPLICATIONS

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

Package Types: 440193

PN: CGH40120F

Số phần tương tự - CGH40120F

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
WOLFSPEED, INC.	CGH40120F	1Mb / 13P	120 W, RF Power GaN HEMT Rev 4.1 - March 2020

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Cree, Inc	CGH40010	948Kb / 12P	10 W, RF Power GaN HEMT Rev 1.4
	CGH40045	1Mb / 12P	45 W, RF Power GaN HEMT Rev 1.1
	CGH40006P	1Mb / 14P	6 W, RF Power GaN HEMT Rev 3.0
	CGH40090PP	1Mb / 13P	90 W, RF Power GaN HEMT Rev 5.0
	CGH40120P	1Mb / 12P	120 W, RF Power GaN HEMT Rev 3.0
	CGH40180PP	2Mb / 13P	180 W, RF Power GaN HEMT Rev 3.0
WOLFSPEED, INC.	CG2H40120F	1Mb / 11P	120 W, 28 V, RF Power GaN HEMT Rev. 2.0, 2022-6-28
	CGH40090PP	1Mb / 13P	90 W, RF Power GaN HEMT Rev 5.2 March 2020
	CGH40120F	1Mb / 13P	120 W, RF Power GaN HEMT Rev 4.1 - March 2020
	CGH40120P	1Mb / 12P	120 W, RF Power GaN HEMT Rev. 4.0, 2022-7-14