ACE4908A datasheet(3/7 Pages) ACE

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ACE4908A

Dual P-Channel Enhancement Mode MOSFET

VER 1.1

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-20

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA

-0.35

-0.8

Gate Leakage Current

IGSS

VDS=0V ,VGS=±12V

±100

Zero Gate Voltage Drain Current

IDSS

VDS=-20V, VGS=0V

-1

VDS=-20V,VGS=0V,TJ=55℃

-5

On-State Drain Current

ID(on)

VDS

≤ -4.5V,V

GS =-5V

-2

Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-1.0A

0.42

0.52

VGS=-2.5V, ID=-0.8A

0.58

0.70

VGS=-1.8V, ID=-0.5A

0.75

0.95

Forward Transconductance

gFS

VDS=-10V, ID=-1.0A

1.5

Diode Forward Voltage

VSD

IS=-0.5A ,VGS=0V

-0.8

-1.2

Switching

Total Gate Charge

VDS=-10V, VGS=-4.5V,

ID=-0.88A

1.5

2.0

Gate-Source Charge

Qgs

0.3

Gate-Drain Charge

Qgd

0.2

Turn-On Delay Time

td(on)

VGNE=-4.5V, VDD=-10V,

RL=20

Ω, R

G=6

Ω, I

D=-0.5A

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn- Off Rise Time

Dynamic

Input Capacitance

Ciss

VDS=-10V, VGS=0V,f=1MHz

145

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

B. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

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