ACE2358M datasheet(3/7 Pages) ACE

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ACE2358M

N-Channel 60-V MOSFET

VER 1.1

Electrical Characteristics

(TA=25℃, unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

Gate-Body Leakage

VGS(th)

VDS = 0 V, VGS = ±20 V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 48 V, VGS = 0 V

VDS = 48 V, VGS = 0 V, TJ = 55°C

On-State Drain Current a

ID(on)

VDS = 5 V, VGS = 10 V

Drain-Source On-Resistance a

rDS(on)

VGS = 10 V, ID = 2.5 A

VGS = 4.5 V, ID = 2 A

107

Forward Transconductance a

gfs

VDS = 15 V, ID = 2.5 A

Diode Forward Voltage a

VSD

IS = 1 A, VGS = 0 V

0.74

Dynamic b

Total Gate Charge

VDS = 30 V, VGS = 4.5 V, ID = 2.5 A

Gate-Source Charge

Qgs

1.0

Gate-Drain Charge

Qgd

1.7

Turn-On Delay Time

td(on)

VDS = 30 V, RL = 12

Ω, I

D = 2.5 A,

VGEN = 10 V, RGEN

= 6 Ω

Rise Time

Turn-Off Delay Time

td(off)*

Fall Time

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

330

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Notes

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing.

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