PTF080451 datasheet(1/9 Pages) INFINEON

tên linh kiện	PTF080451

Giải thích chi tiết về linh kiện	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

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nhà sản xuất	INFINEON [Infineon Technologies AG]

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Data Sheet

1 of 9

2004-06-24

PTF080451

LDMOS RF Power Field Effect Transistor

45 W, 869–960 MHz

Features

•

Broadband internal matching

•

Typical EDGE performance

- Average output power = 22.5 W

- Gain = 18 dB

- Efficiency = 40%

•

Typical CW performance

- Output power at P–1dB = 60 W

- Gain = 17 dB

- Efficiency = 60%

•

Integrated ESD protection: Human Body

Model, Class 1 (minimum)

•

Excellent thermal stability

•

Low HCI drift

•

Capable of handling 10:1 VSWR @ 28 V,

45 W (CW) output power

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Description

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended

for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold

metallization ensures excellent device lifetime and reliability.

PTF080451E

Package 30265

RF Characteristics at TCASE = 25°C unless otherwise indicated

EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 450 mA, POUT = 22.5 W, f = 959.8 MHz

Characteristic

Symbol

Min

Typ

Max

Units

Error Vector Magnitude

EVM (RMS)

—

2.0

—

%

Modulation Spectrum @ 400 kHz

ACPR

—

–62

—

dBc

Modulation Spectrum @ 600 kHz

ACPR

—

–76

—

dBc

Gain

Gps

—

18

—

dB

Drain Efficiency

η

D

—

40

—

%

Two–Tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, f = 960 MHz, tone spacing = 1 MHz

Characteristic

Symbol

Min

Typ

Max

Units

Gain

Gps

17

18

—

dB

Drain Efficiency

η

D

40

42

—

%

Intermodulation Distortion

IMD

—

–32

–30

dBc

EDGE Modulation Spectrum Performance

VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

36

38

40

42

44

46

48

50

Output Power (dBm)

10

15

20

25

30

35

40

45

50

55

Efficiency

400 kHz

600 kHz

Số phần tương tự - PTF080451

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Infineon Technologies A...	PTF080101	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101M	258Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Rev. 02.1, 2009-02-18
	PTF080101S	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101S	172Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz 2004-10-05
	PTF080601	293Kb / 6P	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz 2003-12-05

More results

Mô tả tương tự - PTF080451

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Infineon Technologies A...	PTF080601	293Kb / 6P	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz 2003-12-05
	PTF080901	205Kb / 10P	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz 2004-04-05
	PTF210451	406Kb / 8P	LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz 2003-12-22
Tyco Electronics	MAPLST0810-030CF	137Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
	MAPLST0810-090CF	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
	MAPLST0810-030CF-05-2004	137Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
	MAPLST0810-090CF-05-2004	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
Infineon Technologies A...	PTF080101M	258Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Rev. 02.1, 2009-02-18

More results

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