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STW70N60M2 bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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This is information on a product in full production.
September 2014
DocID024327 Rev 4
1/13
13
STW70N60M2
N-channel 600 V, 0.03
Ω typ., 68 A MDmesh™ M2
Power MOSFET in a TO-247 package
Datasheet
production data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.
D(2)
G(1)
S(3)
AM01476v1
1
2
3
TO-247
Order codes
VDS @ TJmax
RDS(on) max
ID
STW70N60M2
650 V
0.040
68 A
Table 1. Device summary
Order codes
Marking
Package
Packaging
STW70N60M2
70N60M2
TO-247
Tube
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