STTH3L06UFY datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STTH3L06-Y

4/9

DocID026719 Rev 1

Figure 7. Reverse recovery charges versus

dIF/dt (typical values)

Figure 8. Reverse recovery softness factor

versus dIF/dt (typical values)

QnC

RR()

100

150

200

250

300

350

400

450

500

100

120

140

160

180

200

dI /dt A/µ

(s)

I = 0.5 x I (av)

I = I (av)

I = 2 x I (av)

V = 400 V

T = 125 °C

Sfactor

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

120

140

160

180

200

IF = IF(AV)

VR = 400 V

Tj = 125 °C

dI /dt A/µ

(s)

Figure 9. Relative variation of dynamic

parameters versus junction temperature

Figure 10. Transient peak forward voltage

versus dIF/dt (typical values)

0.00

0.25

0.50

0.75

1.00

1.25

100

125

I = I (av)

V = 400 V

Reference: T = 125 °C

T°C

j()

Sfactor

IRM

QRR

FP()

100

120

140

160

180

200

dI /dt A/µ

(s)

I= I

F(AV)

T = 125 °C

Figure 11. Forward recovery time versus dIF/dt

(typical values)

Figure 12. Junction capacitance versus reverse

voltage applied (typical values)

tns)

FR(

100

120

140

160

100

120

140

160

180

200

dI /dt A/µ

(s)

I= I

F(AV)

= 1.6 V

T = 125 °C

CpF)

(

100

1000

F = 1 MHz

= 30 mV

osc

RMS

T = 25 °C

VR(V)

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