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STM32F446ME bảng dữ liệu(PDF) 107 Page - STMicroelectronics

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DocID027107 Rev 5
107/201
STM32F446xC/E
Electrical characteristics
174
Figure 27. LACCHSI versus temperature
1. Guaranteed based on test during characterization.
Low-speed internal (LSI) RC oscillator
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
--
1
%
Factory-
calibrated
TA = –40 to 105 °C(3)
–8
-
4.5
%
TA = –10 to 85 °C(3)
–4
-
4
%
TA = 25 °C
–1
-
1
%
tsu(HSI)(2)
HSI oscillator
startup time
--
2.2
4
µs
IDD(HSI)(2)
HSI oscillator
power consumption
-
-
60
80
µA
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design.
3. Guaranteed based on test during characterization.
Table 42. LSI oscillator characteristics (1)
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
fLSI(2)
2. Guaranteed based on test during characterization..
Frequency
17
32
47
kHz
tsu(LSI)(3)
3. Guaranteed by design.
LSI oscillator startup time
-
15
40
µs
IDD(LSI)(3)
LSI oscillator power consumption
-
0.4
0.6
µA
Table 41. HSI oscillator characteristics (1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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