STL100N8F7 datasheet(3/14 Pages) STMICROELECTRONICS

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STL100N8F7

Electrical ratings

DocID027058 Rev 3

3/14

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

±20

ID(1)

Drain current (continuous) at Tc= 25 °C

100

ID(1)

Drain current (continuous) at TC = 100 °C

IDM(1)(2)

Drain current (pulsed)

400

ID(3)

Drain current (continuous) at Tpcb = 25 °C

ID(3)

Drain current (continuous) at Tpcb = 100 °C

IDM(3)(2)

Drain current (pulsed)

PTOT(1)

Total dissipation at TC = 25 °C

120

PTOT(3)

Total dissipation at Tpcb = 25 °C

4.8

EAS(4)

Single pulse avalanche energy

220

Operating junction temperature

-55 to 175

°C

Tstg

Storage temperature

°C

Notes:

(1)This value is rated according to Rthj-c.

(2)Pulse width limited by safe operating area.

(3)This value is rated according to Rthj-pcb.

(4)Starting TJ=25°C, ID=25 A, VDD=40 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

1.25

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

31.3

°C/W

Notes:

(1)When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec

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