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STGWA30M65DF2 bảng dữ liệu(PDF) 6 Page - STMicroelectronics

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Electrical characteristics
STGW30M65DF2, STGWA30M65DF2
6/19
DocID027768 Rev 3
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
IF = 30 A, VR = 400 V, VGE = 15 V
(see Figure 29: " Test circuit for
inductive load switching")
di/dt = 1000 A/µs
-
140
ns
Qrr
Reverse recovery
charge
-
880
nC
Irrm
Reverse recovery
current
-
17
A
dIrr/dt
Peak rate of fall of
reverse recovery
current during tb
-
650
A/µs
Err
Reverse recovery
energy
-
115
µJ
trr
Reverse recovery
time
IF = 30 A, VR = 400 V, VGE = 15 V
TJ = 175 °C (see Figure 29: " Test
circuit for inductive load switching")
di/dt = 1000 A/µs
-
244
ns
Qrr
Reverse recovery
charge
-
2743
nC
Irrm
Reverse recovery
current
-
25
A
dIrr/dt
Peak rate of fall of
reverse recovery
current during tb
-
220
A/µs
Err
Reverse recovery
energy
-
320
µJ
2.1
Electrical characteristics (curves)



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