STD10P10F6

Electrical characteristics

DocID026365 Rev 2

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Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD(1)

Forward on voltage

-

1.1

V

Reverse recovery time

di/dt = 100 A/µs,

-

26.5

ns

Reverse recovery charge

-

36.5

nC

Reverse recovery current

-

2.7

A

Notes:

For the P-channel Power MOSFET the actual polarity of the voltages and the

current must be reversed.