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STTH8R03DJF bảng dữ liệu(PDF) 4 Page - STMicroelectronics

tên linh kiện STTH8R03DJF
Giải thích chi tiết về linh kiện  Ultrafast recovery diode high efficiency
PDF  9 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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STTH8R03DJF bảng dữ liệu(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH8R03DJF
4/9
Doc ID 022762 Rev 1
Figure 3.
Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (typical values)
Figure 5.
Reverse recovery time versus dIF/dt
(typical values)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
tP(S)
Zth(j-c)/Rth(j-c)
0
2
4
6
8
10
12
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VR=200 V
Tj=125 °C
IRM(A)
dIF/dt(A/µs)
0
10
20
30
40
50
60
70
80
90
100
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VR=200 V
Tj=125 °C
dIF/dt(A/µs)
TRR(ns)
QRR(nC)
0
20
40
60
80
100
120
140
160
180
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VR=200 V
Tj=125 °C
dIF/dt(A/µs)
Figure 7.
Softness factor versus dIF/dt
(typical values)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
SFACTOR
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
50
100
150
200
250
300
350
400
450
500
IF=IF(AV)
VR=200 V
Tj=125 °C
dIF/dt(A/µs)
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
25
50
75
100
125
IF=IF(AV)
VR=200 V
Reference: Tj=125 °C
IRM
SFACTOR
QRR
Tj(°C)



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