ST25TA64K datasheet(41/45 Pages) STMICROELECTRONICS

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ST25TA64K

Maximum rating

Stressing the device above the rating listed in Table 52 may cause permanent damage to

the device. These are stress ratings only and operation of the device at these or any other

conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect the device

reliability.

Table 52. Absolute maximum ratings

Symbol

Parameter

Min.

Max.

Unit

Ambient operating temperature

-40

°C

TSTG, hSTG,

tSTG

Storage conditions

Sawn wafer on

UV tape

°C

6 (1)

1. Counted from ST shipment date.

months

kept in its original packing form

TSTG

Storage temperature

Sawn Bumped

Wafer

(kept in its

antistatic bag)

°C

Storage time

months

ICC (2)

2. Based on characterization, not tested in production. Maximum absorbed power = 100 mW @ 7.5 A/m

RF supply current AC0 - AC1

100

VMAX_1 (2)

RF input voltage

amplitude between

AC0 and AC1, GND

pad left floating

VAC0-VAC1

VMAX_2 (2)

AC voltage between

AC0 and GND, or AC1

and GND

VAC0-GND or

VAC1-GND

-0.5

4.5

VESD

Electrostatic discharge

voltage (human body

model) (3)

3. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114A, C1 = 100 pF, R1 = 1500

Ω, R2 = 500 Ω)

AC0-AC1

1000

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