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RHFL6000A bảng dữ liệu(PDF) 16 Page - STMicroelectronics

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Additional guidelines for SET mitigation
RHFL6000A
16/31
DocID028379 Rev 2
7
Additional guidelines for SET mitigation
This section provides detailed design guidelines necessary to obtain the required
performance against SET. In this respect, we can identify two main areas for intervention:
ground connection and external components selection.
7.1
Ground connections
To achieve the best performance in terms of output voltage accuracy, noise immunity and
robustness against single event effects, it is recommended to implement a proper PCB
layout by following the suggestions described below.
According to qualitative simulations of single events, some very short SET (i.e., a duration
in the 100 ns range) are strongly dependent on the stray inductances versus GND. The
best solution to reduce the parasitic inductance is the adoption of a GND plane (with
separate power and sense paths where possible). By minimizing the stray GND
impedance, this approach is of great assistance in controlling the amplitude of the SET
events near the load.
If this solution is not applicable, we suggest using a star-bus topology, where the PCB
reference GND connection is close to the GND pin of the regulator.
To achieve a good GND sense, it is necessary to comply with the following rules:
connect the regulator GND pin and load GND node both to the sense and power GND
traces on the PCB using vias to minimize the path;
an array of multiple via structures works better than a single large one;
for GND connectors/plugs: use separate plugs for power supply and testing probes;
connect input/output capacitors GND terminals to GND sense on the PCB.
7.2
Capacitor selection
With reference to Figure 4: "Heavy Ion test configuration", a combination of capacitors must
be present on the input and output ports. For the INPUT terminals, this may consist of a
100 µF bulk capacitor (CIN1) in parallel with a polyester 100 nF one (CIN2) used for
decoupling purposes.
For each of the two OUTPUT connections (pins 1, 2 and 6, 7) we suggest using a
combination of a 47µF bulk capacitor (COUT1, COUT2,) in parallel with a polyester 100 nF one
(COUT4, COUT5) for decoupling purposes.
Regarding parts selection, for the 100 nF elements we suggest low-ESL and low ESR
capacitors.
Concerning the selection of the three bulk capacitors, we suggest:
using tantalum SMD;
selecting size and ESL as small as possible;
placing capacitors as close as possible to the input/output terminals;
using an array of capacitors in parallel, where possible. This works better than a single
capacitor against the short events.



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