ALED6001 datasheet(11/26 Pages) STMICROELECTRONICS

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ALED6001

Electrical characteristics

Output current sensing section

VFB

Feedback voltage (VVFBP - VVFBN

differential current sensing voltage)

VADIM = 0.3 V

203040

VADIM = 0.6 V

110

120

130

VADIM = 1.2 V

280

300

304

Feedback reference voltage accuracy

VADIM to LDO3

290

300

310

VADIM,OFF

ADIM pin voltage turn off threshold

240

270

290

ADIM pin voltage turn off hysteresis

IVFBP

Feedback positive input current

VVFBP = 12.0 V

VVFBN = 11.7 V

-32

-25

-18

μA

IVFBN

Feedback negative input current

VVFBP = 12.0 V

VVFBN = 11.7 V

-7

-5

-4

PWM dimming control

RPWMO

PWMO gate driver output resistance

Pull-up

Pull-down

tr,PWMO

PWMO gate driver rise time

(20 to 80%)

VVDR = 5 V, CL = 3.3 nF

130

tf,PWMO

PWMO gate driver fall time (80 to 20%)

Fault management section

XFAULT output low level

IXFAULT = 4 mA

0.12

0.2

XFAULT high level leakage current

VXFAULT = 5 V

µA

VOVFB,th

OVFB input overvoltage detection

threshold

1.14

1.20

1.25

OVFB input overvoltage detection

hysteresis

100

130

OVFB pull-up current

VOVFB = 1 V

0.711.2

µA

Open load/VFBP pin disconnection

detection threshold (differential)

(VVFBP - VVFBN)

-190

-120

-80

Overload /VFBN pin disconnection

detection threshold (differential)

550

600

650

VFBx undervoltage detection threshold

VVFBx respect to SGND

3.1

3.5

4.1

Table 6. Electrical characteristics (continued)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

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