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STPS3170 bảng dữ liệu(PDF) 2 Page - STMicroelectronics

tên linh kiện STPS3170
Giải thích chi tiết về linh kiện  Power Schottky rectifier
PDF  10 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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STPS3170 bảng dữ liệu(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS3170
2/10
DocID027020 Rev1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.59 x IF(AV) + 0.027 x IF
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
170
V
VRRM
Repetitive peak reverse voltage, Tj = -40 °C
160
V
IF(RMS)
Forward rms current
15
A
IF(AV)
Average forward current,
δ = 0.5, square wave
SMAflat, TL = 130 °C
3A
SMBflat, TL = 140 °C
IFSM
Surge non repetitive forward current, tp = 10 ms
sinusoidal
SMAflat
75
A
SMBflat
80
PARM
(1)
Repetitive peak avalanche power, square wave tp = 10 µs, Tj = 125 °C
210
W
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature(2)
-40 to +175
°C
1. For pulse time duration deratings, please refer toFigure 11. More details regarding the avalanche energy measurements
and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible
avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche
specification”.
2.
condition to avoid thermal runaway for a diode on its own heatsink
dP tot
dTj
---------------
1
Rth j
a
()
--------------------------
<
Table 3. Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to lead, SMAflat
20
°C/W
Junction to lead, SMBflat
15
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
4.0
µA
Tj = 125 °C
0.73
4.0
mA
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 3 A
0.82
V
Tj = 125 °C
0.63
0.67
Tj = 25 °C
IF = 6 A
0.89
Tj = 125 °C
0.70
0.75
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%



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