STD28P3LLH6AG datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STD28P3LLH6AG

4/15

DocID028397 Rev 1

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = -250 µA

-30

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = -30 V

-1

µA

VGS = 0 V, VDS = -30 V,

Tcase = 125 °C

-10

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±18 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = -250 µA

-1

-2.5

RDS(on)

Static drain-source on-

resistance

VGS = -10 V, ID = -6 A

0.027

0.03

VGS = -4.5 V, ID = -6 A

0.038

0.05

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = -25 V, f = 1 MHz, VGS = 0 V

1480

Coss

Output

capacitance

170

Crss

Reverse transfer

capacitance

125

Total gate charge

VDD = -15 V, ID = -12 A, VGS = -10 V

(see Figure 14: "Gate charge test

circuit")

Qgs

Gate-source

charge

4.7

Qgd

Gate-drain charge

5.6

Table 6: Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VDD = -15 V, ID = -6 A RG = 4.7 Ω,

VGS = -10 V (see Figure 13: "Switching

times test circuit for resistive load" )

Rise time

7.9

td(off)

Turn-off delay

time

41.5

Fall time

6.9

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