STB80N4F6AG datasheet(3/15 Pages) STMICROELECTRONICS

tên linh kiện	STB80N4F6AG

Giải thích chi tiết về linh kiện	High avalanche ruggedness

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STB80N4F6AG

Electrical ratings

DocID027978 Rev 2

3/15

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

± 20

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC= 100 °C

IDM(1)

Drain current (pulsed)

320

PTOT

Total dissipation at TC = 25 °C

IAV

Avalanche current, repetitive or not-repetitive (pulse width

limited by TJ max)

EAS

Single pulse avalanche energy(Starting TJ= 25 °C, = ID =IAV,

VDD= 25 V)

149

Tstg

Storage temperature

- 55 to 175

°C

Max. operating junction temperature

175

°C

Notes:

(1) Pulse width limited by safe operating area.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max.

2.14

°C/W

Rthj-pcb(1)

Thermal resistance junction-ambient max.

°C/W

Notes:

(1)When mounted on FR-4 board of inch2, 2 oz Cu

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