STW28N60DM2 datasheet(1/20 Pages) STMICROELECTRONICS

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December 2015

DocID027040 Rev 4

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This is information on a product in full production.

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STB28N60DM2, STP28N60DM2,

STW28N60DM2

N-channel 600 V, 0.13

Ω typ., 21 A MDmesh™ DM2

Power MOSFETs in D²PAK, TO-220 and TO-247 packages

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS @

TJmax.

RDS(on)

max.

ID

PTOT

STB28N60DM2

600 V

0.16 Ω

21 A

170 W

STP28N60DM2

STW28N60DM2



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

These high voltage N-channel Power MOSFETs

are part of the MDmesh™ DM2 fast recovery

diode series. They offer very low recovery charge

(Qrr) and time (trr) combined with low RDS(on),

rendering them suitable for the most demanding

high efficiency converters and ideal for bridge

topologies and ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB28N60DM2

28N60DM2

D²PAK

Tape and reel

STP28N60DM2

TO-220

Tube

STW28N60DM2

TO-247

Tube

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STW28N60M2	1Mb / 21P	Extremely low gate charge 14-Mar-2017
STMicroelectronics	STW28N60M2	1Mb / 21P	N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247 14-Mar-2017

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