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BSP550 bảng dữ liệu(PDF) 3 Page - Infineon Technologies AG

tên linh kiện BSP550
Giải thích chi tiết về linh kiện  MiniPROFET(High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis)
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nhà sản xuất  INFINEON [Infineon Technologies AG]
Trang chủ  http://www.infineon.com
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BSP550 bảng dữ liệu(HTML) 3 Page - Infineon Technologies AG

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BSP 550
Parameter and Conditions
Symbol
Values
Unit
at
Tj = 25 °C, Vbb = 24V unless otherwise specified
min
typ
max
Semiconductor Group
Page 3
20.06.96
Operating Parameters
Operating voltage
Tj =-25...+125°C
Vbb(on)
12
40
V
Undervoltage shutdown
Tj =-25...+125°C
Vbb(under)
7
--
10.5
V
Undervoltage restart
Tj =-25...+125°C:
Vbb(u rst)
--
--
11
V
Undervoltage hysteresis
∆V
bb(under)
--
0.4
--
V
Standby current (pin 4),
Vin = low Tj =-25...+100°C
Tj =125°C6)
Ibb(off)
--
10
25
50
µA
Operating current (pin 2),
Vin = high
Tj =-25...+125°C
IGND
--
1
1.6
mA
leakage current (pin 1)
Vin = low
Tj =-25...+125°C
IL(off)
--
--
2
µA
Protection Functions
Current limit (pin 4 to 1)
Tj = 25°C
Tj = -25...+125°C
IL(SC)
1.4
1.4
2.5
--
4.0
4.8
A
Overvoltage protection
I
bb=4mA
Tj =-25...+125°C
Vbb(AZ)
48
--
--
V
Output clamp (ind. load switch off)
VOUT = Vbb - VON(CL), I
bb = 4mA
VON(CL)
--
72
--
V
Thermal overload trip temperature
Tjt
135
150
--
°C
Thermal hysteresis
∆T
jt
--
10
--
K
Inductive load switch-off energy dissipation7)
Tj Start = 85 °C, single pulse, IL = 1.0 A, Vbb = 12 V
EAS
--
--
0.3
J
Reverse Battery
Reverse battery voltage8)
-Vbb
30
V
Continious reverse drain current
TA = 25°C
-IS
--
--
1
A
Drain-Source diode voltage
IF = 1 A, Vin = low
VOUT>Vbb
-VON
--
--
1.2
V
6) increase of standby current at T
j = 125°C caused by temperature sense current
7) while demagnetizing load inductance, dissipated energy is E
AS=
∫(VON(CL) * iL(t) dt,
approx.
EAS=
1/
2 * L * I
2
L
* (
VON(CL)
VON(CL)-Vbb
)
8) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode)
is normally limited by the connected load.



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