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L6599AF bảng dữ liệu(PDF) 26 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Very low temperature improved high voltage resonant controller
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L6599AF bảng dữ liệu(HTML) 26 Page - STMicroelectronics

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L6599AF
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DocID028175 Rev 3
This concern applies to converters designed with a high resonance frequency (indicatively,
> 150 kHz), so that they run at high frequency also at full load. Otherwise, the converter runs
at high frequency at light load, where the current flowing in the MOSFETs of the half bridge
leg is low, so that, generally, an R(DS)ON rise is not an issue. However, it is wise to check this
point anyway and the following equation is useful to compute the drop on the bootstrap
driver:
Equation 13
where Qg is the gate charge of the external power MOSFET, R(DS)ON is the on-resistance of
the bootstrap DMOS (150 W, typ.) and Tcharge is the ON-time of the bootstrap driver, which
equals about half the switching period minus the deadtime TD. For example, using
a MOSFET with a total gate charge of 30 nC, the drop on the bootstrap driver is about 3 V at
a switching frequency of 200 kHz:
Equation 14
If a significant drop on the bootstrap driver is an issue, an external ultra-fast diode can be
used, therefore saving the drop on the R(DS)ON of the internal DMOS.
F
on
)
DS
(
e
arg
ch
g
F
on
)
DS
(
e
arg
ch
Drop
V
R
T
Q
V
R
I
V
V
7
.
2
6
.
0
150
10
27
.
0
10
5
.
2
10
30
V
6
6
9
Drop



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